Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere
- 1 November 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (18) , 2531-2533
- https://doi.org/10.1063/1.110449
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Involvement of the topmost Ge layer in the Ge surface segregation during Si/Ge heterostructure formationApplied Physics Letters, 1991
- Selective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperaturesApplied Physics Letters, 1991
- Influence of thermal annealing on the electron mobility in modulation doped Si/SiGe heterostructuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Are bare surfaces detrimental in epitaxial growth?Applied Physics Letters, 1991
- Low-temperature chemical vapor deposition of epitaxial Si and SiGe layers at atmospheric pressureApplied Physics Letters, 1991
- Influence of surfactants in Ge and Si epitaxy on Si(001)Physical Review B, 1990
- Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of SbJapanese Journal of Applied Physics, 1990
- Ge Segregation during molecular beam epitaxial growth of Si1−xGex/Si layersThin Solid Films, 1989
- Surfactants in epitaxial growthPhysical Review Letters, 1989
- Growth of abrupt Ge layers in Si (100)Journal of Crystal Growth, 1989