Molecular beam epitaxial writing of patterned GaAs epilayer structures
- 15 April 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (8) , 491-493
- https://doi.org/10.1063/1.90097
Abstract
A technique for achieving molecular beam epitaxial writing of patterned GaAs epilayer structures is described. With this technique, patterned GaAs epilayer structures with controlled thickness profiles, lengthwise varying thickness, featureless and optically smooth sidewalls, and a linewidth as narrow as 10 μm were written. This technique also allows for the first time controlled variation of chemical compositions in the epilayer structure written in a lengthwise direction in the plane of the epilayer.Keywords
This publication has 3 references indexed in Scilit:
- Selective area growth of GaAs/AlxGa1−xAs multilayer structures with molecular beam epitaxy using Si shadow masksApplied Physics Letters, 1977
- EXPERIMENTS ON LIGHT WAVES IN A THIN TAPERED FILM AND A NEW LIGHT-WAVE COUPLERApplied Physics Letters, 1971
- Preferential Etching and Etched Profile of GaAsJournal of the Electrochemical Society, 1971