Selective area growth of GaAs/AlxGa1−xAs multilayer structures with molecular beam epitaxy using Si shadow masks
- 15 August 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (4) , 301-304
- https://doi.org/10.1063/1.89677
Abstract
Selective growth of patterned GaAs and AlxGa1−xAs thin‐film structures with well‐defined optically smooth mirrorlike edges has been achieved with a Si‐mask shadowing technique for molecular beam epitaxy. Single and multilayer stripe‐mesa waveguides with widths as narrow as 1 μm, two‐dimensional waveguide tapers, and various other epilayer patterns have been fabricated using single‐level or multilevel masking. This technique has potential for use in the realization of integrated optoelectronic circuits in the GaAs/AlxGa1−xAs system.Keywords
This publication has 4 references indexed in Scilit:
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