Thermal analysis of GaAs-AlGaAs etched-well surface-emitting double-heterostructure lasers with dielectric mirrors
- 1 June 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 29 (6) , 1981-1995
- https://doi.org/10.1109/3.234461
Abstract
No abstract availableKeywords
This publication has 41 references indexed in Scilit:
- Thermal properties of etched-well surface-emitting diode lasers and two-dimensional arraysPublished by SPIE-Intl Soc Optical Eng ,1992
- Temperature dependence of GaAs-AlGaAs vertical cavity surface emitting lasersApplied Physics Letters, 1992
- GaAs vertical-cavity surface emitting lasers fabricated by reactive ion etchingIEEE Photonics Technology Letters, 1991
- Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterizationIEEE Journal of Quantum Electronics, 1991
- Room temperature vertical cavity GaAs/AlGaAs surface emitting injection laserElectronics Letters, 1990
- A generalized thermal model for stripe-geometry injection lasersJournal of Applied Physics, 1987
- Thermal impedance of diode lasers: Comparison of experimental methods and a theoretical modelJournal of Applied Physics, 1981
- CW operation of GaInAsP stripe lasersIEEE Journal of Quantum Electronics, 1981
- Doping and electrical properties of Mg in LPE AlxGa1−xAsJournal of Applied Physics, 1979
- Thermal-resistance models for proton-isolated double-heterostructure lasersIEE Journal on Solidstate and Electron Devices, 1978