Carrier mobility in inversion layers and rf plasma induced radiation defects at the SiSiO2 interface
- 31 January 1984
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (1) , 13-19
- https://doi.org/10.1016/0038-1101(84)90087-x
Abstract
No abstract availableKeywords
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