The effect of O2 plasma on properties of the Si-SiO2 system
- 16 December 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 62 (2) , 727-736
- https://doi.org/10.1002/pssa.2210620247
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Radiation damage in silicon dioxide films exposed to reactive ion etchingJournal of Applied Physics, 1979
- The Role of Hydrogen in SiO2 Films on SiliconJournal of the Electrochemical Society, 1979
- THE DEFECT STRUCTURE OF THE Si-SiO2 INTERFACE, A MODEL BASED ON TRIVALENT SILICON AND ITS HYDROGEN “COMPOUNDS”Published by Elsevier ,1978
- Frequency and temperature tests for lateral nonuniformities in MIS capacitorsIEEE Transactions on Electron Devices, 1977
- Negative bias stress of MOS devices at high electric fields and degradation of MNOS devicesJournal of Applied Physics, 1977
- Dry process technology (reactive ion etching)Journal of Vacuum Science and Technology, 1976
- Electrochemical Charging of Thermal SiO2 Films by Injected Electron CurrentsJournal of Applied Physics, 1971
- Defect Structure and Irradiation Behavior of Noncrystalline SiO2IEEE Transactions on Nuclear Science, 1971
- Low-Temperature Reduction of Fast Surface States Associated with Thermally Oxidized SiliconJournal of the Electrochemical Society, 1971
- The effects of oxide traps on the MOS capacitanceIEEE Transactions on Electron Devices, 1965