Defect Structure and Irradiation Behavior of Noncrystalline SiO2
- 1 December 1971
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 18 (6) , 113-116
- https://doi.org/10.1109/tns.1971.4326421
Abstract
Various phenomena occuring during ionizing or particle irradiation of vitreous silica and Si-SiO2 interface structures are explained. Densification and changes in bond polarizability are due to the basic trend of maximizing π-bonding between Si and O atoms with minimum bond strain. Hole trapping in SiO2, as exhibited, e.g., in irradiated MOS devices, is an intrinsic property of the Si-O bond. Irradiation generates trivalent Si and non-bridging O defects. These interact with impurities, especially SiOH and SiH groups, as well as with interstitial H. These defects determine the radiation behavior of vitreous silica and Si-SiO2 interfaces, as well as the stability of MOS devices.Keywords
This publication has 10 references indexed in Scilit:
- The Role of Hydrogen in SiO2 Films on SiliconJournal of the Electrochemical Society, 1979
- METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURESApplied Physics Letters, 1971
- Hydrides and Hydroxyls in Thin Silicon Dioxide FilmsJournal of the Electrochemical Society, 1971
- Model for Radiation-Induced Charge Trapping and Annealing in the Oxide Layer of MOS DevicesJournal of Applied Physics, 1969
- Electron paramagnetic resonance investigation of the Si-SiO2 interfaceSurface Science, 1969
- The Radiation Compaction of Vitreous SilicaJournal of Applied Physics, 1968
- Radiation resistant MOS devicesIEEE Transactions on Electron Devices, 1968
- Fabrication of planar silicon transistors without photoresistSolid-State Electronics, 1968
- Effects of ionizing radiation on oxidized silicon surfaces and planar devicesProceedings of the IEEE, 1967
- The Formation and Detection of Intermediates in Water RadiolysisRadiation Research Supplement, 1964