Spectroscopic determination of the energy gaps in the inversion layer band structure on vicinal planes of Si (001)
- 31 July 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 31 (3) , 193-196
- https://doi.org/10.1016/0038-1098(79)90433-2
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Electric Break through in N-Channel Si Inversion Layer Tilted from (100) SurfaceJournal of the Physics Society Japan, 1978
- Magnetic field dependence of the valley splitting in n-type inverted silicon mosfet surfacesSolid State Communications, 1978
- Surface Band Structure of Electron Inversion Layers on Vicinal Planes of Si(100)Physical Review Letters, 1978
- Effect of interface on the effective mass approximationSurface Science, 1978
- High frequency conductivity of two-dimensional electrons in a superlatticeSurface Science, 1978
- Superlattice and a two-dimensional electron gasSurface Science, 1978
- High-frequency magnetoconductivity in space charge layers on semiconductorsSurface Science, 1978
- Far-infrared emission from Si-MOSFET’s on high-index surfacesApplied Physics Letters, 1978
- Valley-Valley Splitting in Inversion Layers on a High-Index Surface of SiliconPhysical Review Letters, 1978
- Influence of a One-Dimensional Superlattice on a Two-Dimensional Electron GasPhysical Review Letters, 1977