The role of acceptors in the luminescence of n-type GaAs
- 1 August 1967
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 28 (8) , 1485-1491
- https://doi.org/10.1016/0022-3697(67)90277-6
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Radiative Cascade TheoryPhysical Review B, 1965
- Infrared Transmission and Fluorescence of Doped Gallium ArsenidePhysical Review B, 1964
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- Optical Transitions Involving Impurities in SemiconductorsPhysical Review B, 1963
- RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GaAs p-n JUNCTIONSApplied Physics Letters, 1963
- Recombination of electrons and donors in semiconductorsJournal of Physics and Chemistry of Solids, 1961
- Band Structure and Transport Properties of Some 3–5 CompoundsJournal of Applied Physics, 1961