Two-dimensional simulation of the drain-current transient effect in GaAs MESFETs
- 30 April 1991
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 34 (4) , 397-401
- https://doi.org/10.1016/0038-1101(91)90170-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomaliesIEEE Transactions on Electron Devices, 1988
- Half-implicit difference scheme for numerical simulation of transient processes in semiconductor devicesSolid-State Electronics, 1986
- The roles of the surface and bulk of the semi-insulating substrate in low-frequency anomalies of GaAs integrated circuitsIEEE Transactions on Electron Devices, 1985
- Backgating in GaAs MESFET'sIEEE Transactions on Electron Devices, 1982
- Carrier injection and backgating effect in GaAs MESFET'sIEEE Electron Device Letters, 1982
- Detailed electrical characterisation of the deep Cr acceptor in GaAsJournal of Physics C: Solid State Physics, 1980