Effects of doping-density gradients on band-gap narrowing in silicon and GaAs devices
- 15 June 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (12) , 4823-4827
- https://doi.org/10.1063/1.343215
Abstract
The limitations of the theory for band-gap narrowing, which is based on uniform material, are considered in devices that have steep doping gradients. Validity criteria are derived that place upper bounds on the dopant and carrier density gradients for the application of the results from uniform theory. The existence of wave-function tailing beyond the potential barriers that occur in devices is studied. At room temperature the effects due to these tails are usually small, but at low temperatures they can become very significant.This publication has 7 references indexed in Scilit:
- Operation of poly bipolar transistors near liquid-helium temperatures (9 K)IEEE Electron Device Letters, 1988
- Non-ideal base current in bipolar transistors at low temperaturesIEEE Transactions on Electron Devices, 1987
- Impurity bands and band tailing in moderately doped siliconJournal of Applied Physics, 1986
- Heavy doping effects on bandgaps, effective intrinsic carrier concentrations and carrier mobilities and lifetimesSolid-State Electronics, 1985
- Band gap narrowing due to many-body effects in silicon and gallium arsenideJournal of Physics C: Solid State Physics, 1984
- Charge neutrality in heavily doped emittersApplied Physics Letters, 1981
- The modification of electron energy levels by impurity atomsAnnals of Physics, 1961