Atomic diffusion in semiconductors

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Abstract
A simple description of atomic diffusion mechanisms in semiconductors is given, and then the meaning of the diffusion coefficient is outlined. Studies of diffusion in the elemental semiconductors Ge and Si are then described, beginning with self-diffusion, followed by impurity diffusion and concentrating the latter on Si in view of its commercial importance. Then the review looks at the diffusion phenomena found when two dopants are diffused sequentially, such as the effect of electric fields generated during diffusion, and the 'push-out' effect, and other interactions. Diffusion in the III-V semiconducting compounds is then briefly described. Finally, some speculation is made into the future importance of diffusion as a means of introducing dopants into semiconductors, in the context of present developments in semiconductor technology.

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