PRE-PRECIPITATION OF PHOSPHORUS IN HEAVILY DOPED SILICON
- 15 November 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (10) , 457-459
- https://doi.org/10.1063/1.1653269
Abstract
Presently, silicon device technology phosphorous diffusions with high surface concentrations are commonly used for the formation of the emitter areas. Annealing treatments at or below 800°C have been shown to lead to the formation of extrinsic dislocation loops in such areas. A transmission electron microscopic investigation combined with resistivity measurements and profile determinations leads to the interpretation of these loops as a primary step of phosphorous precipitation in the supersaturated lattice.Keywords
This publication has 1 reference indexed in Scilit:
- Slip Patterns on Boron-Doped Silicon SurfacesJournal of Applied Physics, 1961