Oxygen content of heavily doped silicon
- 1 May 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (9) , 887-889
- https://doi.org/10.1063/1.95876
Abstract
We have determined the oxygen content of heavily doped n- and p-type silicon using charged particle activation analysis. Specifically, when crystals are grown using the Czochralski technique and keeping growth parameters constant, the oxygen content does not vary with dopant additions for p− and n+ crystals but does seem to increase for p+ crystals.Keywords
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