Spatial distribution of oxygen in luminescent porous silicon films
- 11 April 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (15) , 1986-1988
- https://doi.org/10.1063/1.111715
Abstract
Transmission electron microscopy associated with electron energy loss spectroscopy imaging was used to determine structural spatial variations and compositional variation in heavily doped (0.006 Ω cm) and lightly doped (0.4 Ω cm) luminescent porous silicon films.Keywords
This publication has 12 references indexed in Scilit:
- Time resolved photoluminescence of porous silicon: Evidence for tunneling limited recombination in a band of localized statesApplied Physics Letters, 1993
- Influence of stress on the photoluminescence of porous silicon structuresApplied Physics Letters, 1992
- Porous silicon formation mechanismsJournal of Applied Physics, 1992
- Visible light emission due to quantum size effects in highly porous crystalline siliconNature, 1991
- Photoluminescence of high porosity and of electrochemically oxidized porous silicon layersSurface Science, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Formation Mechanism of Porous Silicon Layer by Anodization in HF SolutionJournal of the Electrochemical Society, 1980
- Anodic dissolution of silicon in hydrofluoric acid solutionsSurface Science, 1966
- Electropolishing Silicon in Hydrofluoric Acid SolutionsJournal of the Electrochemical Society, 1958