Resonant tunneling of holes in Ga0.51In0.49P/GaAs double-barrier heterostructures

Abstract
We report the observation of resonant tunneling of holes in the GaInP/GaAs system. The tunneling structure consists of two lattice‐matched 30‐Å‐thick Ga0.51In0.49P barriers with a 40‐Å GaAs well in between, sandwiched by p‐GaAs layers. Three resonances are clearly visible in the current‐voltage characteristics with direct evidence of a negative differential resistance at 77 K. Analyzed in terms of tunneling probabilities for light and heavy holes, respectively, calculations show some discrepancy with experiment, suggesting band‐mixing effects.