Interface Temperatures and Temperature Gradients in Silicon During Pulsed Laser Irradiation
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Interfacial overheating during melting of Si at 190 m/sJournal of Materials Research, 1987
- Nanosecond resolution time-resolved x-ray study of silicon during pulsed-laser irradiationJournal of Materials Research, 1986
- Relation Between Temperature and Solidification Velocity in Rapidly Cooled Liquid SiliconMRS Proceedings, 1984
- Thermodynamic and Kinetic Studies of Pulsed-Laser Annealing from Transient Conductivity MeasurementsMRS Proceedings, 1984
- Thermal Conductivity of Silicon and Germanium from 3°K to the Melting PointPhysical Review B, 1964