Interfacial overheating during melting of Si at 190 m/s
- 1 February 1987
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 2 (1) , 91-95
- https://doi.org/10.1557/jmr.1987.0091
Abstract
An upper limit is placed on the overheating at the liquid/solid interface during melting of (100) Si at high interface velocity. The limit is based on an energy-balance analysis of melt depths measured in real time during pulsed-laser melting of Si on sapphire. When combined with previous measurements of the freezing kinetics of Si, this limit indicates that the kinetics of melting and freezing are nonlinear, i.e., the undercooling required to freeze at modest (15 m/s) velocities is proportionately much greater than the overheating required to melt at high (190 m/s) velocities.Keywords
This publication has 11 references indexed in Scilit:
- Generation of 1.6 ns ruby laser pulses by passive q-switchingOptics Communications, 1986
- Asymmetric Melting and Freezing Kinetics in SiliconPhysical Review Letters, 1986
- Observation of superheating during picosecond laser meltingSolid State Communications, 1986
- Nanosecond resolution time-resolved x-ray study of silicon during pulsed-laser irradiationJournal of Materials Research, 1986
- Solidification kinetics of pulsed laser melted silicon based on thermodynamic considerationsApplied Physics Letters, 1985
- Rapid Melting and Regrowth Velocities in Silicon Heated by Ultraviolet Picosecond Laser PulsesPhysical Review Letters, 1984
- Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser IrradiationPhysical Review Letters, 1983
- Melt dynamics of silicon-on-sapphire during pulsed laser annealingApplied Physics Letters, 1983
- Kinetics of Solidification at Rapid RatesMRS Proceedings, 1983
- Crystallization ProcessesPublished by Elsevier ,1982