Melt dynamics of silicon-on-sapphire during pulsed laser annealing
- 1 March 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (5) , 445-447
- https://doi.org/10.1063/1.93965
Abstract
Transient electrical conductance measurements have been made on 0.45-μm silicon-on-sapphire during pulsed laser annealing with 25-ns ruby irradiation. The photoconductive contribution to the transient current was sufficiently small that the entire melt and resolidification process could be directly observed. The technique yields quantitative measures of melt depths, melting velocities (5–13 m/s), and solidification velocities (2.8–3.3 m/s). Combined with the complementary techniques of time-resolved reflectivity, energy transmission, and calorimetric energy absorption, transient conductance provides a powerful new diagnostic for investigating melt dynamics.Keywords
This publication has 11 references indexed in Scilit:
- Time-resolved conductance and reflectance measurements of silicon during pulsed-laser annealingPhysical Review B, 1983
- Transitions to Defective Crystal and the Amorphous State Induced in Elemental Si by Laser QuenchingPhysical Review Letters, 1982
- Energy absorption during pulsed-laser annealingApplied Physics Letters, 1982
- Measurement of the Velocity of the Crystal-Liquid Interface in Pulsed Laser Annealing of SiPhysical Review Letters, 1982
- Stress-relieved regrowth of silicon on sapphire by laser annealingApplied Physics Letters, 1980
- Nonthermal pulsed laser annealing of Si; plasma annealingPhysics Letters A, 1979
- Laser annealing of silicon on sapphireJournal of Applied Physics, 1979
- A device for laser beam diffusion and homogenisationJournal of Physics E: Scientific Instruments, 1979
- Picosecond laser-induced melting and resolidification morphology on SiApplied Physics Letters, 1979
- Time-resolved reflectivity of ion-implanted silicon during laser annealingApplied Physics Letters, 1978