Rapid Melting and Regrowth Velocities in Silicon Heated by Ultraviolet Picosecond Laser Pulses
- 9 July 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 53 (2) , 182-185
- https://doi.org/10.1103/physrevlett.53.182
Abstract
Direct measurements of the silicon liquid/solid interface velocity have been made during both melt-in and regrowth for crystalline silicon irradiated with a pulsed (15 psec) ultraviolet laser. The liquid films produced were up to 40 nm thick and were fully amorphized upon resolidification. Above threshold, the regrowth velocity was 25 m/sec, independent of laser fluence. The results imply a nonlinear relationship between supercooling and interface velocity.Keywords
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