Arsenic diffusion in silicon melted by high-power nanosecond laser pulsing
- 15 July 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (2) , 137-140
- https://doi.org/10.1063/1.90283
Abstract
The time evolution of temperature and melting in amorphous silicon layers laser irradiated was calculated numerically. Experiments were performed in Si crystals implanted with 400‐keV As to a dose of 5×1015/cm2 and illuminated with 50‐ns‐duration Q‐switched ruby laser pulse in the energy range 1.0–3.0 J/cm2. Comparison between experimental and calculated results allows a quantitative understanding of the amorphous–to–single‐crystal transition. A good agreement was found between the experimental As profiles after laser irradiation and those calculated with a diffusion coefficient of 10−4 cm2/s for As in liquid silicon.Keywords
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