Lattice location of boron implanted silicon after laser annealing
- 1 January 1978
- journal article
- Published by Springer Nature in Lettere al Nuovo Cimento (1971-1985)
- Vol. 21 (3) , 89-93
- https://doi.org/10.1007/bf02762794
Abstract
No abstract availableKeywords
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- Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92, E(4He) = 400–4000 keVAtomic Data and Nuclear Data Tables, 1974
- Use of the channeling technique to locate interstitial impuritiesRadiation Effects, 1972