Ion channeling and perturbed angular correlation (pac) studies of In-As atom Pairs in silicon
- 1 June 1988
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 33 (1-4) , 591-594
- https://doi.org/10.1016/0168-583x(88)90637-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Detection of In-P and In-Sb atom pairs by perturbed angular correlation in siliconApplied Physics Letters, 1986
- Solid-phase-epitaxial growth and formation of metastable alloys in ion implanted siliconJournal of Vacuum Science & Technology B, 1983
- Incorporation of implanted In and Sb in silicon during amorphous layer regrowthJournal of Applied Physics, 1979
- INFLUENCE OF n-TYPE DOPANTS ON THE LATTICE LOCATION OF IMPLANTED p-TYPE DOPANTS IN Si AND GeApplied Physics Letters, 1969