Ion Beam Induced Amorphization and Crystallization Processes in Silicon and GaAs
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Characterisation of MeV neon damage in siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy depositionPhysical Review B, 1985
- Kinetics, Microstructure And Mechanisms of Ion Beam Induced Epitaxial Crystallization of Semiconductors.MRS Proceedings, 1985
- Ion implantation and low-temperature epitaxial regrowth of GaAsJournal of Applied Physics, 1981