Species dependence of passivation and reactivation of acceptors in hydrogenated GaAs

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Abstract
Effects of passivation and light-induced reactivation of acceptors in high-purity hydrogenated GaAs are investigated with low-temperature photoluminescence. The effectiveness of both processes has been found to be strongly dependent on the chemical identity of acceptor species, thus allowing a qualitative assessment of the relative stability of different acceptor-hydrogen passivating complexes in p-type hydrogenated GaAs. Efficient neutralization of acceptors in high-purity n-type hydrogenated GaAs is also reported, in contradiction with results of recent studies on heavily doped materials where passivation of minority dopants was not observed. The implications of these experimental data on theoretical models of the [AV:acceptor passivation mechanism are discussed.