Hydrogen passivation of C acceptors in high-purity GaAs
- 24 August 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (8) , 596-598
- https://doi.org/10.1063/1.98358
Abstract
The effects of hydrogenation in high‐purity p‐type GaAs grown by molecular beam epitaxy and metalorganic chemical vapor deposition have been investigated by low‐temperature photoluminescence and Hall‐effect measurements. Before hydrogenation, photoluminescence measurements showed the dominant acceptor in the original samples was C, while after hydrogenation, the concentration of electrically active C acceptors was significantly reduced and the samples were highly resistive. These electrical and spectroscopic results show that C acceptors in GaAs can be passivated by hydrogenation.Keywords
This publication has 14 references indexed in Scilit:
- Si donor neutralization in high-purity GaAsApplied Physics Letters, 1987
- Photoluminescence study of the shallow donor neutralization in GaAs(Si) by atomic hydrogenApplied Physics Letters, 1986
- New shallow acceptor levels in GaAsJournal of Electronic Materials, 1986
- Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposureApplied Physics Letters, 1986
- Electron mobility studies of the donor neutralization by atomic hydrogen in GaAs doped with siliconJournal of Applied Physics, 1986
- Hydrogen passivation of shallow-acceptor impurities inp-type GaAsPhysical Review B, 1986
- Characterization of high-purity Si-doped molecular beam epitaxial GaAsJournal of Applied Physics, 1985
- Donor neutralization in GaAs(Si) by atomic hydrogenApplied Physics Letters, 1985
- An optical characterization of defect levels induced by MBE growth of GaAsJournal of Vacuum Science & Technology B, 1983
- Luminescence and Excitation Spectra of Exciton Emission in GaAsPhysica Status Solidi (b), 1974