Electron mobility studies of the donor neutralization by atomic hydrogen in GaAs doped with silicon
- 1 June 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (11) , 3774-3777
- https://doi.org/10.1063/1.336764
Abstract
Hall effect and conductivity measurements have been performed on n- and n+-silicon-doped GaAs epilayers before and after hydrogen plasma exposure. We show that the reduction of the free-carrier concentration in the hydrogen diffused region is accompanied by a significant increase of the electron mobility. This increase is mainly attributed to the transformation of the ionized silicon donors into neutral complexes. This result is in quite good agreement with the model of silicon donor neutralization by formation of neutral silicon–hydrogen complexes.This publication has 12 references indexed in Scilit:
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