Hydrogen passivation of a bulk donor defect (E c −0.36 eV) in GaAs
- 1 June 1982
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (6) , 4509-4511
- https://doi.org/10.1063/1.331190
Abstract
The passivation of a bulk donor defect (Ec –0.36 eV) in polycrystalline GaAs by reaction with atomic hydrogen has been observed using deep level transient spectroscopy. The concentration profile of the defect is presented as a function of the duration and temperature of the exposure to atomic hydrogen—when exposed for 3 h at 250 °C, 3×1015 donor defects cm−3 were passivated to a depth of ∼1.1 μm.This publication has 6 references indexed in Scilit:
- Deep trapping centres in n -GaAs surface barrier diodes for nuclear radiation detectionElectronics Letters, 1980
- Hydrogen passivation of point defects in siliconApplied Physics Letters, 1980
- Photoluminescence recovery in rehydrogenated amorphous siliconApplied Physics Letters, 1978
- Hydrogenation and dehydrogenation of amorphous and crystalline siliconApplied Physics Letters, 1978
- Substitutional doping of amorphous siliconSolid State Communications, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974