Ion beam analysis techniques and characterization of amorphous hydrogenated GaAs
- 15 December 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 218 (1-3) , 579-583
- https://doi.org/10.1016/0167-5087(83)91046-3
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Interactions between H2 and N2 plasmas and a GaAs(100) surface: Chemical and electronic propertiesApplied Physics Letters, 1983
- Hydrogen ratios and profiles in deposited amorphous and polycrystalline films and in metals using nuclear techniquesNuclear Instruments and Methods, 1980
- Emploi de la réaction résonnante 1H(15N, αγ) pour l'obtention de profils de concentration d'hydrogène dans les matériauxRevue de Physique Appliquée, 1978