Carbon–hydrogen complexes in vapor phase epitaxial GaN
- 20 January 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (3) , 357-359
- https://doi.org/10.1063/1.118388
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Deep level defects in n-type GaN compensated with MgApplied Physics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Hydrogen in GaN: Novel Aspects of a Common ImpurityPhysical Review Letters, 1995
- Stability of the wurtzite-type structure under high pressure: GaN and InNPhysical Review B, 1994
- Hole Compensation Mechanism of P-Type GaN FilmsJapanese Journal of Applied Physics, 1992
- Carbon-hydrogen complex in GaPApplied Physics Letters, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Observation of carbon incorporation during gallium arsenide growth by molecular beam epitaxyApplied Physics Letters, 1988
- Mechanism of carbon incorporation in MOCVD GaAsJournal of Crystal Growth, 1984
- High purity GaAs prepared from trimethylgallium and arsineJournal of Crystal Growth, 1981