Denuded zone formation in p 〈100〉 silicon
- 15 January 1984
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (2) , 536-541
- https://doi.org/10.1063/1.333059
Abstract
The effects of gas‐ambient and heat‐treatment order on denuded zone formation in p 〈100〉 silicon wafers have been investigated. A model of silicon self‐interestitial interaction with oxygen out‐diffusion and precipitate growth is presented to explain the observed variations.This publication has 6 references indexed in Scilit:
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