Oxide-semiconductor interface roughness and electrical properties of polycrystalline silicon thin-film transistors
- 25 April 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (17) , 2273-2275
- https://doi.org/10.1063/1.111641
Abstract
Polycrystalline silicon thin-film transistors (TFTs) have been fabricated with a smooth oxide-semiconductor interface. Device characteristics are found to be improved with the interface smoothness. The channel mobility is especially improved to about 2 times larger than that of conventional poly-Si TFTs. The topography of the oxide-semiconductor interface was analyzed using nanometer resolution atomic force microscopy. The roughness of the oxide-semiconductor interface and the electrical properties of poly-Si TFTs are found to have a strong relationship.lKeywords
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