Diffusion of Silicon into Tungsten in Field-Emission Microscope

Publisher Website
Google Scholar
Abstract
We report that when silicon is evaporated onto a tungsten field emitter at room temperature and the tip is then annealed at higher temperatures in order to carry out surface migration and thermal desorption studies, part of the silicon diffuses into the interior. When the tip is flashed at 2500 °K to produce a clean surface, all the silicon is not removed and it can be brought out again by annealing between 1000 and 1500 °K. This is demonstrated by a silicon buildup on the surface with an activation energy of 9.3 ± 0.5 kcal/mole. The rate of buildup is enhanced by the application of high voltage.

This publication has 4 references indexed in Scilit: