Time resolved annealing of interface traps at the silicon oxide-silicon interface
- 15 November 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (10) , 5013-5019
- https://doi.org/10.1063/1.342453
Abstract
Anneal kinetics of interface traps have been studied using capacitance-voltage measurements. The silicon oxide-silicon samples have been annealed without any gate structure on top of the silicon oxide. An exponential decay of trap density with annealing time has been observed at metal gate-silicon oxide-silicon capacitors built after annealing at temperatures ranging from 250 to 620 °C. A model is proposed to explain the obtained results.This publication has 12 references indexed in Scilit:
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