Electronic structure of Si(111)-(111)A-type andB-type interfaces
- 15 September 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 42 (9) , 5735-5743
- https://doi.org/10.1103/physrevb.42.5735
Abstract
The self-consistent electronic properties of the epitaxial Si(111)-(111) interfaces are computed for the experimentally observed A- and B-type interface structures. The densities of states projected at the different atomic sites and the two-dimensional band structure provide a detailed analysis of the electronic properties of the silicon-silicide interface. The Schottky-barrier height turns out to be dependent not only on the interface structure, but also on the interface relaxation distance. A critical analysis of existing results is also presented.
Keywords
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