Mechanism for the Staebler-Wronski effect ina-Si:H
- 15 August 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (7) , 3403-3406
- https://doi.org/10.1103/physrevb.44.3403
Abstract
A mechanism is proposed for the Staebler-Wronski effect in a-Si:H. A bridge-bonded H interstitial defect is identified as the annealed state that can form a higher-energy metastable dangling-bond state in the light-soaked state. This defect can account for various features of light-induced degradation. The calculations are based on an a-Si:H model containing 10% hydrogen, bonded as the monohydride species. A Si-H two- and three-body interatomic potential has also been developed for the simulations.Keywords
This publication has 16 references indexed in Scilit:
- Diatomic-hydrogen-complex dissociation: A microscopic model for metastable defect generation in SiPhysical Review Letters, 1990
- Identification of defects in amorphous siliconPhysical Review Letters, 1990
- Role of hydrogen complexes in the metastability of hydrogenated amorphous siliconPhysical Review B, 1990
- Ab initiocalculations on metastable defects in a-Si:H: The Staebler-Wronski effectPhilosophical Magazine Part B, 1990
- Saturation of the light-induced defect density in hydrogenated amorphous siliconApplied Physics Letters, 1989
- Generation of amorphous-silicon structures with use of molecular-dynamics simulationsPhysical Review B, 1987
- Defect dynamics and the Staebler-Wronski effect in hydrogenated amorphous siliconPhysical Review B, 1987
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICONLe Journal de Physique Colloques, 1981
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977