Plastic relaxation of metamorphic single layer and multilayer InGaAs/GaAs structures
- 15 August 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (7) , 839-841
- https://doi.org/10.1063/1.112177
Abstract
The plastic relaxation of multilayer structures of strained InGaAs grown above critical thickness on GaAs is reported and compared with the relaxation of single layers and with theory. We show that a composite structure, taken as a whole, follows the same relaxation law as observed in single layers. However, departures of the strains of some component layers from theory show that misfit dislocations are easily pinned at an interface. Implications for the design of relaxed buffer layer growth are discussed.Keywords
This publication has 11 references indexed in Scilit:
- Determining the lattice relaxation in semiconductor layer systems by x-ray diffractionJournal of Applied Physics, 1993
- Complete strain relief of heteroepitaxial GaAs on siliconApplied Physics Letters, 1992
- The effect of growth temperature on plastic relaxation of In0.2Ga0.8As surface layers on GaAsJournal of Crystal Growth, 1992
- Metamorphic In0.3Ga0.7As/In0.29Al0.71As layer on GaAs: A new structure for high performance high electron mobility transistor realizationApplied Physics Letters, 1992
- Plastic relaxation of InGaAs grown on GaAsApplied Physics Letters, 1991
- Dislocations in strained-layer epitaxy: theory, experiment, and applicationsMaterials Science Reports, 1991
- Relaxed buffer layersSemiconductor Science and Technology, 1991
- On the mechanisms of strain release in molecular-beam-epitaxy-grown InxGa1−xAs/GaAs single heterostructuresJournal of Applied Physics, 1989
- Dislocation filtering in semiconductor superlattices with lattice-matched and lattice-mismatched layer materialsApplied Physics Letters, 1986
- Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or CompoundsJournal of Applied Physics, 1970