Metamorphic In0.3Ga0.7As/In0.29Al0.71As layer on GaAs: A new structure for high performance high electron mobility transistor realization
- 24 August 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (8) , 922-924
- https://doi.org/10.1063/1.107729
Abstract
A new high electron mobility transistor (HEMT) using InAlAs/InGaAs grown on GaAs has been successfully realized. This structure, with an In content close to 30%, presents several advantages over conventional pseudomorphic HEMT on GaAs and lattice matched HEMT on InP. To accommodate the mismatch between the active layer and the GaAs substrate, a metamorphic buffer has been grown. High electron mobility with high two‐dimensional electron gas density (20 700 cm2/V s with 4×1012 cm−2) and high Schottky barrier quality (Vb=0.68 V with η=1.1) have been obtained. A 3 μm gate length device has shown intrinsic transconductance as high as 530 mS/mm.Keywords
This publication has 10 references indexed in Scilit:
- High-performance InP-based HEMT millimeter-wave low-noise amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTsIEEE Electron Device Letters, 1990
- Metamorphic InyGa1−yAs/InzAl1−zAs heterostructure field effect transistors grown on GaAs(001) substrates using molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1990
- Electron transport properties of strained InxGa1−xAsApplied Physics Letters, 1990
- W-band low-noise InAlAs/InGaAs lattice-matched HEMTsIEEE Electron Device Letters, 1990
- Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTsIEEE Electron Device Letters, 1989
- Lattice-Mismatched Growth and Transport Properties of InAlAs/InGaAs Heterostructures on GaAs SubstratesJapanese Journal of Applied Physics, 1989
- In0.30Al0.70As/In0.30Ga0.70As quasi-insulating gate strained-layer field effect transistors grown by molecular beam epitaxyThin Solid Films, 1988
- Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate lengthIEEE Electron Device Letters, 1988
- Interfacial lattice mismatch effects in III–V compoundsJournal of Crystal Growth, 1975