Oxygen coverage effects in SIMS quantitative analysis using a primary rastered probe
- 1 February 1985
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 7 (1) , 53-61
- https://doi.org/10.1002/sia.740070111
Abstract
The surface oxygen coverage θ has a great influence on positive secondary ion yield. θ must be equal to 1 for optimum quantitative analysis. On SIMS machines (like the CAMECA IMS‐3F) using a rastered high current density probe, instead of a static defocused (hence low current density) beam, there is a danger that this condition is not achieved where bombarding the sample with Ar+ ions while blowing O2 on to the sample. A simple model of the evolution of θ under the rastered probe is proposed; it provides a good frame to interpret surprising experimental results such as: (a) the existence of transients which can last for several seconds (primary Ar+); (b) the existence of cristallographic differential sputtering even though the oxygen back pressure is high; (c) the secondary signal can decrease when the primary beam intensity is increased. An easy and quick way of detecting conditions that would lead to erroneous interpretation is proposed.Keywords
This publication has 2 references indexed in Scilit:
- Aspects of quantitative secondary ion mass spectrometryNuclear Instruments and Methods, 1980
- Adsorption of gases studied by secondary ion emission mass spectrometrySurface Science, 1975