Resolved splitting of the free exciton luminescence band in silicon
- 1 July 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 31 (1) , 5-7
- https://doi.org/10.1016/0038-1098(79)90522-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Analysis of LO and TO phonon assisted free exciton luminescence in siliconSolid State Communications, 1978
- Uniaxially stressed silicon: Fine structure of the exciton and deformation potentialsPhysical Review B, 1978
- Determination of the mass-anisotropy exciton splitting in siliconSolid State Communications, 1977
- The splitting of the 1s excitons in siliconSolid State Communications, 1977
- Direct observation of the ground state splitting of the indirect free exciton in siliconSolid State Communications, 1976
- Temperature dependence of the relative integrated intensities of symmetry-allowed phonon-assisted exciton emission in Si and GePhysical Review B, 1976
- Temperature Dependence of Silicon Luminescence Due to Splitting of the Indirect Ground StatePhysical Review Letters, 1975
- Exciton energy levels in germanium and siliconJournal of Physics and Chemistry of Solids, 1960