Annealing behavior of hydrogen traps in Ne-implanted Ta

Annealing behavior of defects attributed to the high-atomic-density neon precipitates in tantalum produced by 4.0×${10}^{20}$-9.4×${10}^{21}$ 60-keV ${}_{}{}^{22}{}_{}{}^{}\mathrm{Ne}_{}^{+}{}_{}{}^{}$ ions)/${\mathrm{m}}^2$ has been studied in the temperature range 300-970 K by ion-beam techniques. Four different recovery stages were observed. Two of these are associated with the Ne-precipitate-Ta-matrix interface affected by the Ne-implantation-induced damage; the recovery energies are 1.8 and 2.1 eV. Stages attributed to the dissociation of ${\mathrm{Ne}}_n{V}_m$ complexes (2.6 eV) and to stronger ${\mathrm{Ne}}_n{V}_m$ complexes (> 2.9 eV) are also identified.