Defect trapping of ion-implanted deuterium in nickel

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Abstract
Trapping of ion-implanted deuterium by lattice defects in nickel has been studied by ion-beam-analysis techniques in the temperature range between 30 and 380 K. The deuterium-depth profiles were determined by measuring either the α particles or the protons from the 3He-excited nuclear reaction D(3He,α)p, and the deuterium lattice location was obtained by means of ion channeling. Linear-ramp annealing (1 K/min) following a 10-keV D+ implantation in nickel produced two annealing stages at 275 and 320 K, respectively. The release-vs-temperature data were analyzed by solving the diffusion equation with appropriate trapping terms, yielding 0.24 and 0.43 eV for the trap-binding enthalpies associated with the two stages, referred to as an untrapped solution site. The 0.24-eV trap corresponds to deuterium close to the octahedral interstitial site where it is believed to be trapped at a vacancy, whereas it is suggested that the defect correlated with the 0.43-eV trap is a multiple-vacancy defect. The previously air-exposed and electropolished nickel surface was essentially permeable; the surface-recombination coefficient was determined to be K≳10−19 cm4/s at 350 K.