A 10 Gb/s high sensitivity, monolithically integrated p-i-n-HEMT optical receiver

1 February 1993

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters

Vol. 5 (2) , 163-165
https://doi.org/10.1109/68.195991

Abstract

A high-sensitivity, monolithically integrated optical receiver, composed of a p-i-n-PD and high electron mobility transistors (p-i-n-HEMTs) is described. The receiver sensitivity is -17.3 dBm at a bit error rate of 1*10/sup -9/ for a 10-Gb/s non-return-to-zero (NRZ) lightwave signal. This value is the best result yet reported for 10-Gb/s monolithically integrated receivers. The sensitivity is -30.6 dBm if an erbium-doped fiber amplifier (EDFA) is placed ahead of the p-i-n-NEMT receiver. A transmission experiment using a 150-km dispersion-shifted fiber (DSF) indicates no degradation in the bit error rate characteristics or the eye pattern. This verifies the practicality of the p-i-n-HEMT optical receiver for high-speed transmission systems.<>

Keywords

This publication has 7 references indexed in Scilit:

An ultra-high-speed optoelectronic integrated receiver for fiber-optic communications
IEEE Transactions on Electron Devices, 1992
10-Gb/s high-speed monolithically integrated photoreceiver using InGaAs p-i-n PD and planar doped InAlAs/InGaAs HEMTs
IEEE Photonics Technology Letters, 1992
A OEIC Photoreceiver Using InP/InGaAs Heterojunction Bipolar Transistors at 10 Gb/s
Published by Optica Publishing Group ,1992
Monolithically integrated InP-based front-end photoreceivers
IEEE Transactions on Electron Devices, 1991
High-functionality waveguide/MSM/HEMT integrated receiver prepared by one-step OMCVD growth on patterned InP substrates
Published by Optica Publishing Group ,1991
Monolithically integrated In _0.53 Ga _0.47 As/In _0.52 Al _0.48 As (on InP) MSM/HFET photoreceiver grown by MBE
Electronics Letters, 1990
A 3 GHz transimpedance OEIC receiver for 1.3-1.55 mu m fiber-optic systems
IEEE Photonics Technology Letters, 1990