Mise en evidence d'un nouveau type de défaut réticulaire dans V3Si par microscopic électronique à haute tension (1000 kV)
- 27 September 1978
- journal article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 38 (3) , 359-366
- https://doi.org/10.1080/01418617808239241
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
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