Low temperature direct bonding of non-hydrophilicsurfaces
- 29 April 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (9) , 693-695
- https://doi.org/10.1049/el:19940497
Abstract
The authors have found that extremely strong bonds can be formed between wafer surfaces of LPCVD silicon dioxide after a dry plasma pretreatment. The bonded wafers were examined for bond yield, interfacial quality, and mechanical strength. Preliminary results indicate that successful low-temperature bonds can be formed to non-hydrophilic surfaces.Keywords
This publication has 4 references indexed in Scilit:
- Low temperature Si3N4 direct bondingApplied Physics Letters, 1993
- Van der Waals bonding of GaAs on Pd leads to a permanent, solid-phase-topotaxial, metallurgical bondApplied Physics Letters, 1991
- Aligned wafer bonding: A key to three dimensional microstructuresJournal of Electronic Materials, 1991
- Silicon-to-silicon direct bonding methodJournal of Applied Physics, 1986