Turn-Off Characteristics of Power Transistors Using Emitter-Open Turn-Off
- 1 May 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Aerospace and Electronic Systems
- Vol. AES-17 (3) , 386-391
- https://doi.org/10.1109/TAES.1981.309066
Abstract
As compared with conventional reverse-biased turn-off, emitteropen turn-off provides superior transistor turn-off characteristics. Not only are the storage time and the fall time of the power transsistors much reduced, but also the device reverse-biased second breakdown phenomenon, commonly associated with turn-off of inductive load, is eliminated. Furthermore the storage time tolerance due to device variation and temperature change is minimized.Keywords
This publication has 2 references indexed in Scilit:
- Avalanche injection and second breakdown in transistorsIEEE Transactions on Electron Devices, 1970
- Secondary breakdown and hot spots in power transistorsProceedings of the IEEE, 1963