Reliability characteristics of ohmic contacts for AlGaGs/GaAs HBTs

11 November 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (23) , 2069-2070
https://doi.org/10.1049/el:19931382

Abstract

The thermal stability of ohmic contacts for AlGaAs/GaAs HBTs is presented. Ti/Pt/Au, Ti/Pt/Au and Cr/Pt/Au, and AuGe/Ni/Ti/Pt/Au were investigated for emitter, base, and collector contacts, respectively. As a result of 200°C storage tests, it was found that these contacts did not limit the reliability of AlGaAs/GaAs HBTs.

Keywords

TI-PT-AU
OHMIC CONTACTS
THERMAL STABILITY
BASE CONTACTS
ALGAAS-GAAS
RELIABILITY CHARACTERISTICS
COLLECTOR CONTACTS
ALGAAS/GAAS HBTS
STORAGE TESTS
CR/PT/AU
TI/PT/AU
AUGE/NI/TI/PT/AU
CR-PT-AU
200 C
AUGE-NI-TI-PT-AU
EMITTER CONTACTS

This publication has 1 reference indexed in Scilit:

Current induced degradation of Be-doped AlGaAs/GaAs HBTs and its suppression by Zn diffusion into extrinsic base layer
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002