Current induced degradation of Be-doped AlGaAs/GaAs HBTs and its suppression by Zn diffusion into extrinsic base layer
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A 34.8 GHz 1/4 static frequency divider using AlGaAs/GaAs HBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Ultra-high speed AlGaAs/GaAs heterojunction bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1985