A 34.8 GHz 1/4 static frequency divider using AlGaAs/GaAs HBTs

This publication has 5 references indexed in Scilit:

• Electron space-charge effects on high-frequency performance of AlGaAs/GaAs HBTs under high-current-density operation
  IEEE Electron Device Letters, 1988
• A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structure
  IEEE Transactions on Electron Devices, 1988
• A 20-GHz frequency divider implemented with heterojunction bipolar transistors
  IEEE Electron Device Letters, 1987
• 22 GHz 1/4 frequency divider using AlGaAs/GaAs HBTs
  Electronics Letters, 1987
• AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process
  IEEE Electron Device Letters, 1987