A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structure
- 1 April 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (4) , 401-404
- https://doi.org/10.1109/16.2471
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Self-aligned AlGaAs/GaAs HBT with InGaAs emitter cap layerElectronics Letters, 1987
- Electron velocity overshoot in the collector depletion layer of AlGaAs/GaAs HBT'sIEEE Electron Device Letters, 1986
- A proposed structure for collector transit-time reduction in AlGaAs/GaAs bipolar transistorsIEEE Electron Device Letters, 1986
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982
- Ballistic transport in semiconductor at low temperatures for low-power high-speed logicIEEE Transactions on Electron Devices, 1979
- Electron dynamics in short channel field-effect transistorsIEEE Transactions on Electron Devices, 1972